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| IRF7501 Datasheet, PDF (2/7 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.135ohm) | |||
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IRF7501
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.041 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.085 0.135
âââ 0.120 0.20
â¦
VGS = 4.5V, ID = 1.7A Â
VGS = 2.7V, ID = 0.85A Â
VGS(th)
Gate Threshold Voltage
0.70 âââ âââ V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
2.6 âââ âââ S VDS = 10V, ID = 0.85A
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0
âââ âââ 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 12V
âââ âââ -100
VGS = -12V
Qg
Total Gate Charge
âââ 5.3 8.0
ID = 1.7A
Qgs
Gate-to-Source Charge
âââ 0.84 1.3 nC VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 2.2 3.3
VGS = 4.5V, See Fig. 9 Â
td(on)
Turn-On Delay Time
âââ 5.7 âââ
VDD = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 24 âââ ns ID = 1.7A
âââ 15 âââ
RG = 6.0â¦
tf
Fall Time
âââ 16 âââ
RD = 5.7⦠Â
Ciss
Input Capacitance
âââ 260 âââ
VGS = 0V
Coss
Output Capacitance
âââ 130 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 61 âââ
Æ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
âââ âââ 1.25
A
âââ âââ 19
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
âââ âââ 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V Â
âââ 39 59
âââ 37 56
ns TJ = 25°C, IF = 1.7A
nC di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
 ISD ⤠1.7A, di/dt ⤠66A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%
 Surface mounted on FR-4 board, t â¤10sec
2
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