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IRF7456 Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A)
Fig 6. On-Resistance Vs. Drain Current
IRF7456
20
RD
VDS
15
VGS
D.U.T.
RG
+-VDD
10V
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
5
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
PDM
t1
t2
0.01
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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