IRF7456 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A)

IRF7456
6000
5000
4000
3000
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
1000
0
1
C_rss
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 16A
10
V_DS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
2.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100
100us
1ms
10
10ms
T_A = 25 °C
T_J = 150 ° C
Single Pulse
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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