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IRF7456 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A) | |||
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IRF7456
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
20 âââ âââ
âââ 0.024 âââ
âââ 0.00470.0065
RDS(on)
Static Drain-to-Source On-Resistance âââ 0.00570.0075
âââ 0.011 0.020
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
0.6 âââ 2.0
âââ âââ 20
âââ âââ 100
Gate-to-Source Forward Leakage
âââ âââ 200
IGSS
Gate-to-Source Reverse Leakage
âââ âââ -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
⦠VGS = 10V, ID = 16A Â
VGS = 4.5V, ID = 13A Â
VGS = 2.8V, ID = 3.5A Â
V VDS = VGS, ID = 250µA
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
44 âââ âââ
âââ 41 62
S VDS = 10V, ID = 16A
ID = 16A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 9.7 15
âââ 18 27
nC VDS = 16V
VGS = 5.0V, Â
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 20 âââ
VDD = 10V
âââ 25 âââ ns ID = 1.0A
âââ 50 âââ
RG = 6.0â¦
âââ 52 âââ
VGS = 4.5V Â
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 3640 âââ
âââ 1570 âââ
VGS = 0V
VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 330 âââ pF Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
250
16
0.25
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 2.5
A showing the
integral reverse
G
âââ âââ 130
p-n junction diode.
S
âââ âââ 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V Â
âââ 48 72 ns TJ = 25°C, IF = 2.5A
âââ 74 110 nC di/dt = 100A/µs Â
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