IRF7321D2PBF Datasheet, PDF (5/8 Pages) International Rectifier – FETKY MOSFET & Schottky Diode

100
0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.00001
IRF7321D2PbF
Power Mosfet Characteristics
PDM
t₁
t₂
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z _thJA + T_A
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
10
100
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.6
0.5
0.4
0.3
V_GS = -4.5V
0.2
0.1
0.0
0
V_GS = -10V
A
10
20
30
-I_D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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0.16
0.12
0.08
I D = -4.9A
0.04
0.00
0
A
3
6
9
12
15
-V_GS , Gate -to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5