IRF7321D2PBF Datasheet, PDF (1/8 Pages) International Rectifier – FETKY MOSFET & Schottky Diode

PD - 95297
IRF7321D2PbF
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low V_F Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
l Lead-Free
Description
The FETKY^TM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
FETKY ^TM MOSFET & Schottky Diode
A
1
A
2
8
K
7
K
V_DSS = -30V
S
3
6 _{D RDS(on) = 0.062Ω}
G
4
5
D
Schottky Vf = 0.52V
Top View
SO-8
Absolute Maximum Ratings ( T_A = 25°C Unless Otherwise Noted)
Parameter
Maximum
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ -10V
-4.7
I_D @ T_A = 70°C
-3.8
I_DM
Pulsed Drain Current À
-38
P_D @T_A = 25°C
Power Dissipation
2.0
P_D @T_A = 70°C
1.3
Linear Derating Factor
16
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient Ã
Maximum
62.5
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ I_SD ≤ -2.9A, di/dt ≤ -77A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
10/12/04