IRF7321D2PBF Datasheet, PDF (2/8 Pages) International Rectifier – FETKY MOSFET & Schottky Diode

IRF7321D2PbF
MOSFET Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V V_GS = 0V, I_D = -250µA
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.042 0.062 _Ω V_GS = -10V, I_D = -4.9A ƒ
––– 0.076 0.098
V_GS = -4.5V, I_D = -3.6A ƒ
V_GS(th)
Gate Threshold Voltage
-1.0 ––– ––– V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
––– 7.7 ––– S V_DS = -15V, I_D = -4.9A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0 _µA V_DS = -24V, V_GS = 0V
––– ––– -25
V_DS = -24V, V_GS = 0V, T_J = 55°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA V_GS = -20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = 20V
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
––– 23 34
––– 3.8 5.7
I_D = -4.9A
nC V_DS = -15V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 5.9 8.9
V_GS = -10V, See Fig. 6 ƒ
t_d(on)
Turn-On Delay Time
––– 13 19
V_DD = -15V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 13 20
––– 34 51
––– 32 48
ns ^{ID = -1.0A}
R_G = 6.0Ω
R_D = 15Ω, ƒ
C_iss
Input Capacitance
––– 710 –––
V_GS = 0V
C_oss
Output Capacitance
––– 380 ––– pF V_DS = -25V
C_rss
Reverse Transfer Capacitance
––– 180 –––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
ISM
Continuous Source Current(Body Diode) ––– ––– -2.5
Pulsed Source Current (Body Diode) ––– ––– -30 ^A
V_SD
Body Diode Forward Voltage
––– -0.78 -1.0 V T_J = 25°C, I_S = -1.7A, V_GS = 0V
t_rr
Reverse Recovery Time (Body Diode) ––– 44 66
Q_rr
Reverse Recovery Charge
––– 42 63
Schottky Diode Maximum Ratings
ns T_J = 25°C, I_F = -1.7A
nC di/dt = 100A/µs ƒ
If (av)
I_SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.2
2.0 ^A
200
20 _A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
See Fig.14
Tc = 70°C
5µs sine or 3µs Rect. pulse Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter
Vfm
Max. Forward voltage drop
Irm
Max. Reverse Leakage current
Ct
Max. Junction Capacitance
dv/dt
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.57
0.77
0.52 ^V
0.79
0.30 _mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
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