IRF7313QPBF Datasheet, PDF (5/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7313QPbF
1200
900
600
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
C_iss
Coss
300
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 5.8A
16
V_DS = 15V
12
8
4
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 _0.01
P_DM
t₁
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1 / t 2
2. Peak T_J = P _DM x Z _thJA + T_A
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5