IRF7313QPBF Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96125
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N- Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free
Description
Specifically designed for Automotive applications, these
HEXFET^® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
IRF7313QPbF
HEXFET^® Power MOSFET
S1
1
G1
2
8
D1
7
D1
V_DSS = 30V
S2
3
6
D2
G2
4
5 _{D2 RDS(on) = 0.029Ω}
Top View
SO-8
Absolute Maximum Ratings ( T_A = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current…
T_A = 25°C
T_A = 70°C
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)
I_S
Maximum Power Dissipation …
T_A = 25°C
T_A = 70°C
P_D
Single Pulse Avalanche Energy ‚
E_AS
30
± 20
6.5
5.2
30
2.5
2.0
1.3
82
Avalanche Current
I_AR
4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
E_AR
dv/dt
0.20
5.8
Junction and Storage Temperature Range
T_J, T_STG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
www.irf.com
Symbol
R_θJA
Limit
62.5
Units
°C/W
1
09/04/07