IRF7313QPBF Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET Power MOSFET

100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
IRF7313QPbF
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
10
100
T_J = 150°C
10
T_J = 25°C
V_DS = 10V
20µs PULSE WIDTH
1
A
3.0
3.5
4.0
4.5
5.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1
VGS = 0V _A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3