IRF6678PBF Datasheet, PDF (5/10 Pages) International Rectifier – DirectFET Power MOSFET

IRF6678PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100
100µsec
10
TJ = 150°C
TJ = 25°C
1
TJ = 40°C
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
180
Limited By Package
160
140
120
100
80
60
40
20
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1msec
10
10msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.2
2.0
1.8
1.6
ID = 250µA
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
900
ID
800
TOP 8.7A
700
11A
BOTTOM 23A
600
500
400
300
200
100
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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