IRF6678PBF Datasheet, PDF (2/10 Pages) International Rectifier – DirectFET Power MOSFET

IRF6678PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
100
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
–––
(Body Diode) g
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
24
1.7
2.3
–––
-6.3
–––
–––
–––
–––
–––
43
12
4.0
15
12
19
28
1.0
21
71
27
8.1
5640
1260
570
Typ.
–––
–––
0.78
43
46
Max. Units
Conditions
–––
–––
2.2
3.0
2.25
V ^VGS ^{= 0V, I}D ^{= 250µA}
mV/°C ^{Reference to 25°C, I}D ^{= 1mA}
mΩ ^VGS ^{= 10V, I}D ^{= 30A i}
V_GS = 4.5V, I_D = 24A i
V ^VDS ^{= V}GS^{, I}D ^{= 250µA}
––– mV/°C
1.0
150
100
-100
–––
µA ^VDS ^{= 24V, V}GS ^{= 0V}
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 15V, I}D ^{= 24A}
65
–––
V_DS = 15V
––– nC ^VGS ^{= 4.5V}
I_D = 24A
–––
See Fig. 15
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
2.2 Ω
–––
V_DD = 16V, V_GS = 4.5V i
––– ns ^ID ^{= 24A}
–––
Clamped Inductive Load
–––
See Fig. 16 & 17
–––
V_GS = 0V
––– pF ^VDS ^{= 15V}
–––
ƒ = 1.0MHz
Max. Units
Conditions
89
MOSFET symbol
A showing the
240
integral reverse
p-n junction diode.
1.2
V ^TJ ^{= 25°C, I}S ^{= 24A, V}GS ^{= 0V i}
65 ns ^TJ ^{= 25°C, I}F ^{= 24A}
69 nC di/dt = 100A/µs i See Fig. 18
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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