IRF6678PBF Datasheet, PDF (4/10 Pages) International Rectifier – DirectFET Power MOSFET

IRF6678PbF
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
1
0.1
2.5V
1
≤60µs PULSE WIDTH
Tj = 25°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
100
VDS = 15V
≤60µs PULSE WIDTH
TJ = 150°C
10
TJ = 25°C
TJ = -40°C
1
0.1
1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
0.1
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
1.5
ID = 29A
1.0
VGS = 10V
VGS = 4.5V
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
25
TJ = 25°C
Vgs = 3.0V
20 _{Vgs = 3.5V}
Vgs = 4.0V
Vgs = 4.5V
15
Vgs = 5.0V
Vgs = 10V
10
5
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
0
20
60 100 140 180 220 260
ID, Drain Current (A)
Fig 9. Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
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