IRF6646PBF Datasheet, PDF (5/10 Pages) International Rectifier – DirectFET

Power MOSFET

1000
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6646PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1msec
10msec
1
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
14
6.0
ID = 150µA
12
ID = 250µA
5.0
ID = 1.0mA
10
ID = 1.0A
8
4.0
6
4
3.0
2
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
1000
900
800
700
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 3.3A
4.0A
BOTTOM 7.2A
600
500
400
300
200
100
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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