IRF6646PBF Datasheet, PDF (4/10 Pages) International Rectifier – DirectFET

Power MOSFET

IRF6646PbF
100
10
6.0V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
100
10
6.0V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
1
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
100
VDS = 10V
≤60µs PULSE WIDTH
TJ = 150°C
10
TJ = 25°C
TJ = -40°C
1
0.1
3
4
5
6
7
8
Fig 6. Typica^Vl ^GT^Sra^, n^Gs^af^tee^-r^toC^-Sh^oa^ur^rca^ec^Vte^or^lti^as^gti^ecs^(V)
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
1
0.1
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0
ID = 12A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
45
40 ^{TJ = 25°C}
35
Vgs = 7.0V
30
Vgs = 8.0V
Vgs = 10V
25
Vgs = 15V
20
15
10
5
0
10
30
50
70
90
110
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs. Drain Current
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