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IRF6646PBF Datasheet, PDF (2/10 Pages) International Rectifier – DirectFETPower MOSFET | |||
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IRF6646PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
IDSS
Drain-to-Source Breakdown Voltage
80
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
Gate Threshold Voltage
3.0
Gate Threshold Voltage Coefficient
âââ
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
17
Qg
Total Gate Charge
âââ
Qgs1
Pre-Vth Gate-to-Source Charge
âââ
Qgs2
Post-Vth Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain Charge
âââ
Qgodr
Gate Charge Overdrive
âââ
Qsw
Switch Charge (Qgs2 + Qgd)
âââ
Qoss
Output Charge
âââ
RG
Gate Resistance
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
Coss
Output Capacitance
âââ
Coss
Output Capacitance
âââ
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
âââ
(Body Diode)
ISM
Pulsed Source Current
âââ
(Body Diode) g
VSD
Diode Forward Voltage
âââ
trr
Reverse Recovery Time
âââ
Qrr
Reverse Recovery Charge
âââ
Typ.
âââ
0.10
7.6
âââ
-11
âââ
âââ
âââ
âââ
âââ
36
7.6
2.0
12
14
14
18
1.0
17
20
31
12
2060
480
120
2180
310
Typ.
âââ
âââ
âââ
36
48
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 1mA
9.5 m⦠VGS = 10V, ID = 12A i
4.9
V VDS = VGS, ID = 150µA
âââ mV/°C
20
250
100
-100
âââ
µA VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 7.2A
50
âââ
VDS = 40V
âââ nC VGS = 10V
ID = 7.2A
âââ
See Fig. 15
âââ
âââ nC VDS = 16V, VGS = 0V
âââ â¦
âââ
VDD = 40V, VGS = 10V i
âââ
ID = 7.2A
âââ ns RG=6.2â¦
âââ
See Fig. 16 & 17
âââ
VGS = 0V
âââ pF VDS = 25V
âââ
Æ = 1.0MHz
âââ
VGS = 0V, VDS = 1.0V, f=1.0MHz
âââ
VGS = 0V, VDS = 64V, f=1.0MHz
Max. Units
Conditions
2.5j
MOSFET symbol
A showing the
96
integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V i
54 ns TJ = 25°C, IF = 7.2A, VDD = 40V
72 nC di/dt = 100A/µs i See Fig. 18
Notes:
Â
Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Thermally limited and used Rθja to calculate.
2
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