GA200SA60SP Datasheet, PDF (5/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

30000
24000
18000
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
C_ies
12000
6000
C_oes
C_res
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA200SA60SP
20
V_CC = 400V
I C = 10100AA
16
12
8
4
0
0
200
400
600
800
Q_G, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25
VCC = 480V
VGE = 15V
24 TJ = 25 ^°C
IC = 200A
23
22
21
20
19
18
0
10
20
30
40
50
R_G , Gate Resistance (O(hmΩ) )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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1000 _{RGG ==2O.0hΩm}
V_GE = 15V
VCC = 480V
100
I_C = 345000AA
IC = 200A
IC = 100A
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5