GA200SA60SP Datasheet, PDF (3/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

GA200SA60SP
250
200
150
Square wave:
60% of rated
volt ag e
100
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 140W
Triangular wave:
Clamp voltage:
80% of rated
50
Ideal diodes
0
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
T_J = 150 °C
100
T_J = 25 °C
10
V_GE = 15V
20µs PULSE WIDTH
1
0.5
1.0
1.5
2.0
2.5
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000
100
T_J = 150 °C
T_J = 25 °C
V_CC = 50V
5µs PULSE WIDTH
10
5
6
7
V_GE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3