GA200SA60SP Datasheet, PDF (4/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

GA200SA60SP
200
150
100
3.0
V_GE = 15V
80 us PULSE WIDTH
2.0
I_C= 400A
50
0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
I_C= 200A
I_C= 100A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
0.1 ^{D = 0.50}
0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D =t₁ / t₂
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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