IRFR3711ZPBF Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U3711ZPbF
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C _ds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12
ID= 12A
10
VDS= 18V
VDS= 10V
8
6
4
2
0
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1
0.1
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
1000.0
Fig 8. Maximum Safe Operating Area
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