IRFR3711ZPBF Datasheet, PDF (3/12 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U3711ZPbF
1000
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10
1000
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1
0.1
0.1
2.5V
20µs PULSE WIDTH
Tj = 25°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
2.5V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
2.0
ID = 30A
VGS = 10V
1.5
10
1
2.0
VDS = 10V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3