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| IRFR3711ZPBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR/U3711ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
Drain-to-Source Breakdown Voltage
20 âââ âââ V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient âââ 13 âââ mV/°C Reference to 25°C, ID = 1mA
e Static Drain-to-Source On-Resistance âââ 4.5 5.7 m⦠VGS = 10V, ID = 15A
âââ 6.2 7.8
e VGS = 4.5V, ID = 12A
Gate Threshold Voltage
1.55 2.0 2.45 V VDS = VGS, ID = 250µA
Gate Threshold Voltage Coefficient
âââ -5.4 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 16V, VGS = 0V
âââ âââ 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
48 âââ âââ
âââ 18 27
S VDS = 10V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 5.1 âââ
VDS = 10V
âââ 1.8 âââ nC VGS = 4.5V
âââ 6.5 âââ
ID = 12A
âââ 4.6 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 8.3 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 9.8 âââ nC VDS = 10V, VGS = 0V
âââ 12 âââ
e VDD = 15V, VGS = 4.5V
âââ 13 âââ
ID = 12A
âââ 15 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 5.2 âââ
Ciss
Input Capacitance
âââ 2160 âââ
VGS = 0V
Coss
Output Capacitance
âââ 700 âââ pF VDS = 10V
Crss
Reverse Transfer Capacitance
âââ 360 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
140
12
7.9
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
f Min. Typ. Max. Units
Conditions
âââ âââ 93
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
âââ âââ 370
A showing the
integral reverse
âââ âââ 1.0
p-n junction diode.
e V TJ = 25°C, IS = 12A, VGS = 0V
âââ 19
âââ 9.4
28
14
e ns TJ = 25°C, IF = 12A, VDD = 10V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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