IRFR3710ZTRPBF Datasheet, PDF (4/12 Pages) International Rectifier – Advanced Process Technology

IRFR/U3710ZPbF & IRFU3710Z-701PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
ID= 33A
10.0
VDS= 80V
VDS= 50V
8.0
VDS= 20V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70 80
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1.00
TJ = 25°C
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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