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IRFR3710ZTRPBF Datasheet, PDF (2/12 Pages) International Rectifier – Advanced Process Technology | |||
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IRFR/U3710ZPbF & IRFU3710Z-701PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 100 âââ âââ V VGS = 0V, ID = 250µA
e âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.088 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance âââ 15 18 m⦠VGS = 10V, ID = 33A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
39 âââ âââ S VDS = 25V, ID = 33A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 100V, VGS = 0V
âââ âââ 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 69 100
ID = 33A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
15
25
âââ
âââ
e nC VDS = 80V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 14 âââ
VDD = 50V
tr
Rise Time
âââ 43 âââ
ID = 33A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
53
42
âââ
âââ
e ns RG = 6.8 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 7.5 âââ
âââ 2930 âââ
âââ 290 âââ
âââ 180 âââ
âââ 1200 âââ
âââ 180 âââ
âââ 430 âââ
nH 6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 56
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 220
integral reverse
G
âââ âââ 1.3
e p-n junction diode.
S
V TJ = 25°C, IS = 33A, VGS = 0V
âââ 35
âââ 41
53
62
e ns TJ = 25°C, IF = 33A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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