IRFR24N15D Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFR24N15D/IRFU24N15D
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
 12
I_{D = 14A}
10
 ^{VDS = 120V}
V_DS = 75V
V_DS = 30V
8
6
4
2
0
0
5
10
15
20
25
30
35
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 175 ° C
10
 T_J= 25 ° C
1
0.1
0.0
 ^V _GS ^{= 0 V}
0.5
1.0
1.5
2.0
2.5
V _SDSource-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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