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| IRFR24N15D Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR24N15D/IRFU24N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
0.18
82
âââ
âââ
âââ
âââ
âââ
âââ
âââ
95
5.0
25
250
100
-100
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 14A Â
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
8.2 âââ âââ
âââ 30 45
âââ 7.4 11
âââ 17 26
âââ 11 âââ
âââ 53 âââ
âââ 19 âââ
âââ 15 âââ
âââ 890 âââ
âââ 220 âââ
âââ 46 âââ
âââ 1460 âââ
âââ 95 âââ
âââ 200 âââ
S VDS = 25V, ID = 14A
ID = 14A
nC VDS = 120V
VGS = 10V, Â
VDD = 75V
ns ID = 14A
RG = 6.8â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 120V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
170
14
14
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 24
A showing the
integral reverse
G
âââ âââ 96
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 14A, VGS = 0V Â
âââ 110 âââ ns TJ = 25°C, IF = 14A
âââ 450 âââ nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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