IRFR24N15D Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFR24N15D/IRFU24N15D
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
5.0V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
10
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
 T_J = 175 ° C
10
1
0.1
4
 T_J = 25 ° C
 V DS= 50V
20µs PULSE WIDTH
6
8
10
12
14
16
V _GS Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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 3.0
I_D = 24A
2.5
2.0
1.5
1.0
0.5
 V _GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature
( ^° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3