IRFP4568PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET

Power MOSFET

IRFP4568PbF
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
10
100µsec
1msec
DC
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
190
Id = 5mA
185
180
175
170
165
160
155
150
145
140
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
3500
3000
2500
ID
TOP
21.5A
29.3A
BOTTOM 103A
2000
1500
1000
500
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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