IRFP4568PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET

Power MOSFET

1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
≤60µs PULSE WIDTH
0.1
Tj = 25°C
4.5V
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
TJ = 175°C
100
TJ = 25°C
10
1
VDS = 50V
≤60µs PULSE WIDTH
0.1
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1000000
100000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
1000
100
Ciss
Coss
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFP4568PbF
10
4.5V
1
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
ID = 103A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 103A
12.0
10.0
8.0
VDS= 120V
VDS= 75V
VDS= 30V
6.0
4.0
2.0
0.0
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3