IRFP4568PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET

Power MOSFET

IRFP4568PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
150
–––
–––
–––
0.17
4.8
–––
–––
5.9
V V_GS = 0V, I_D = 250µA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 103A
3.0 ––– 5.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20
––– ––– 250
µA
V_DS =150V, V_GS = 0V
V_DS = 150V, V_GS = 0V, T_J = 125°C
–––
–––
––– 100
––– -100
nA
V_GS = 20V
V_GS = -20V
––– 1.0 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Forward Transconductance
162 ––– –––
Total Gate Charge
––– 151 227
Gate-to-Source Charge
––– 52 –––
Gate-to-Drain ("Miller") Charge
––– 55 –––
Total Gate Charge Sync. (Q_g - Q_gd)
––– 96 –––
Turn-On Delay Time
––– 27 –––
Rise Time
––– 119 –––
Turn-Off Delay Time
––– 47 –––
Fall Time
––– 84 –––
Input Capacitance
––– 10470 –––
Output Capacitance
––– 977 –––
Reverse Transfer Capacitance
––– 203 –––
h Effective Output Capacitance (Energy Related) ––– 897 –––
g Effective Output Capacitance (Time Related)
––– 1272 –––
S V_DS = 50V, I_D = 103A
I_D = 103A
nC
V_DS = 75V
f V_GS = 10V
f I_D = 103A, V_DS =0V, V_GS = 10V
V_DD = 98V
ns
I_D =103A
f ^{RG =1.0Ω}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz, (See Fig 5)
h V_GS = 0V, V_DS = 0V to 120V (SeeFig.11)
g V_GS = 0V, V_DS = 0V to 120V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 171 A
showing the
––– ––– 684
––– ––– 1.3
integral reverse
G
A
p-n junction diode.
S
f V T_J = 25°C, I_S = 103A, V_GS = 0V
––– 110 –––
––– 133 –––
ns
T_J = 25°C
T_J = 125°C
––– 515
––– 758
–––
–––
nC
T_J = 25°C
T_J = 125°C
V_R = 100V,
f ^{IF = 103A}
di/dt = 100A/µs
––– 8.8 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.144mH
R_G = 25Ω, I_AS = 103A, V_GS =10V. Part not recommended for use
above this value.
ƒ I_SD ≤ 103A, di/dt ≤ 360A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
2
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