IRFP4368PBF_15 Datasheet, PDF (4/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFP4368PbF
1000
TJ = 175°C
100
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
350
300
Limited By Package
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse ^DC
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
95
Id = 5.0mA
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
2000
1500
ID
TOP
33A
53A
BOTTOM 195A
1000
500
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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