IRFP4368PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

PD - 97322
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
IRFP4368PbF
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
75V
1.46mΩ
1.85mΩ
350Ac
195A
D
S
D
G
TO-247AC
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V (Silicon Limited)}
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
T_J
T_STG
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current d
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case k
R_θCS
R_θJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
www.irf.com
G
Gate
D
Drain
Max.
350c
250c
195
1280
520
3.4
± 20
13
-55 to + 175
300
10lbxin (1.1Nxm)
430
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.24
–––
Max.
0.29
–––
40
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
06/02/08