IRFP4368PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFP4368PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
75 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.077 ––– V/°C Reference to 25°C, I_D = 5mAd
––– 1.46 1.85 mΩ V_GS = 10V, I_D = 195A g
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20 µA V_DS = 75V, V_GS = 0V
I_GSS
Gate-to-Source Forward Leakage
––– ––– 250
––– ––– 100
V_DS = 75V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
Q_sync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
650 ––– ––– S V_DS = 50V, I_D = 195A
––– 380 570 nC I_D = 195A
––– 79 –––
V_DS = 38V
––– 105 –––
V_GS = 10V g
––– 275 –––
I_D = 195A, V_DS =0V, V_GS = 10V
R_G(int)
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 0.80 –––
––– 43 –––
––– 220 –––
––– 170 –––
––– 260 –––
––– 19230 –––
––– 1670 –––
––– 770 –––
Ω
ns V_DD = 49V
I_D = 195A
R_G = 2.7Ω
V_GS = 10V g
pF V_GS = 0V
V_DS = 50V
ƒ = 100kHz
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)i} ––– 1700 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)h} ––– 1410 –––
V_GS = 0V, V_DS = 0V to 60V i
V_GS = 0V, V_DS = 0V to 60V h
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) di
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 350c A MOSFET symbol
D
showing the
––– ––– 1280
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 195A, V_GS = 0V g
––– 130 200 ns T_J = 25°C
V_R = 64V,
––– 140 210
T_J = 125°C
––– 450 680 nC T_J = 25°C
I_F = 195A
di/dt = 100A/µs g
––– 530 800
T_J = 125°C
––– 9.1 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ I_SD ≤ 195A, di/dt ≤ 1740A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. Refer to App Notes (AN-1140).
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.022mH
R_G = 25Ω, I_AS = 195A, V_GS =10V. Part not recommended for use
above this value.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
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