IRFP3415 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

IRFP3415
6000
5000
4000
3000
2000
1000
 ^{VGS = 0V, f = 1MHz}
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
C _oss
C _rss
0
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 22A}
16
 ^{VDS = 120V}
V_DS = 75V
V_DS = 30V
12
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
 T_J = 175 ^oC
10
 T_J = 25 ^oC
1
0.1
0.2
 ^VGS ^{= 0 V}
0.6
1.0
1.4
1.8
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
 10us
 100us
10
 1ms
 ^{TC = 25o C}
T_J = 175 ^o C
 10ms
Single Pulse
1
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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