IRFP3415 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

IRFP3415
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
g_fs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min.
150
–––
–––
2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.17 –––
––– 0.042
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
––– 200
––– 17
––– 98
12 –––
55 –––
71 –––
69 –––
4.5 –––
7.5 –––
2400 –––
640 –––
340 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 22A „
V_DS = V_GS, I_D = 250µA
V_DS = 50V, I_D = 22A
V_DS = 150V, V_GS = 0V
V_DS = 120V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = 22A
V_DS = 120V
V_GS = 10V, See Fig. 6 and 13 „
V_DD = 75V
I_D = 22A
R_G = 2.5Ω
R_D = 3.3Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
260
2.2
Max.
43
150
1.3
390
3.3
Units
A
V
ns
µC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
T_J = 25°C, I_S = 22A, V_GS = 0V „
T_J = 25°C, I_F = 22A
di/dt = 100A/µs „
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 25V, starting T_J = 25°C, L = 2.4mH
R_G = 25Ω, I_AS = 22A. (See Figure 12)
ƒ I_SD ≤ 22A, di/dt ≤ 820A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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