IRFP3415 Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

IRFP3415
1000
^TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.05V
BOTTOM 4.5V
100
1000
^TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.05V
BOTTOM 4.5V
100
4.5V
 20us PULSE WIDTH
TJ = 25 ^oC
10
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
 20us PULSE WIDTH
TJ = 175 ^oC
10
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
 T_J = 25^°C
100
 T_J = 175^°C
 V DS= 50V
20µs PULSE WIDTH
10
4
5
6
7
8
9
10
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ ID = 37A}
2.5
2.0
1.5
1.0
0.5
 VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^oC)
Fig 4. Normalized On-Resistance
Vs. Temperature
3