IRFP32N50K_04 Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFP32N50K
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
Ciss
SHORTED
1000
100
Coss
10
1
Crss
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 32A}
16
12
V_DS= 400V
V_DS= 250V
V_DS= 100V
8
4
0
0
40
80
120
160
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 150° C
10
T_J = 25°C
1
0.1
0.2
V _GS = 0 V
0.6
0.9
1.3
1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
10
100
10ms
1000
10000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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