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IRFP32N50K_04 Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFP32N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.54 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ 0.135 0.16 ⦠VGS = 10V, ID = 32A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 500V, VGS = 0V
âââ âââ 250 µA VDS = 400V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
14 âââ âââ S VDS = 50V, ID = 32A
Qg
Total Gate Charge
âââ âââ 190
ID = 32A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 59
âââ âââ 84
nC VDS = 400V
VGS = 10V Â
td(on)
Turn-On Delay Time
âââ 28 âââ
VDD = 250V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 120 âââ ns ID = 32A
âââ 48 âââ
RG = 4.3â¦
âââ 54 âââ
VGS = 10V Â
Ciss
Input Capacitance
âââ 5280 âââ
VGS = 0V
Coss
Output Capacitance
âââ 550 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 45 âââ pF Æ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
âââ 5630 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 155 âââ
âââ 265 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 32
A showing the
integral reverse
G
âââ âââ 130
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 32A, VGS = 0V Â
âââ 530 800 ns TJ = 25°C, IF = 32A
âââ 9.0 13.5 µC di/dt = 100A/µs Â
âââ 30 âââ A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 0.87mH, RG = 25â¦,
IAS = 32A,
 ISD ⤠32A, di/dt ⤠296A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
2
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Rθ is measured at TJ approximately 90°C
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