IRFP32N50K_04 Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFP32N50K
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
10
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 150° C
10
T_J = 25° C
1
0.1
4
VDS= 50V
20µs PULSE WIDTH
5
7
8
9
11
12
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ID = 32A}
2.5
2.0
1.5
1.0
0.5
V_GS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (^° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3