IRFP2907 Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A⑥)

IRFP2907
20000
16000
12000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
4000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 125A
16
V_DS = 60V
V_DS = 37V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 100 200 300 400 500 600 700
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
T_J = 175° C
100
10
T_J = 25 ° C
1
0.1
0.0
V _GS = 0 V
0.5
1.0
1.5
2.0
2.5
3.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
1000
10us
100us
100
1ms
T_C = 25 °C
T_J = 175°C
Single Pulse
10
1
10
10ms
100
V_DS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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