IRFP2907 Datasheet, PDF (3/9 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A⑥)

IRFP2907
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
20µs PULSE WIDTH
TJ = 25 ^°C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
0.1
20µs PULSE WIDTH
TJ = 175 ^°C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
T_J = 175 °C
100
T_J = 25^° C
10
V _DS= 25V
20µs PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
9.0 10.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ID = 209A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3