IRFP2907 Datasheet, PDF (2/9 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A⑥)

IRFP2907
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
75 ––– –––
––– 0.085 –––
––– 3.6 4.5
2.0 ––– 4.0
130 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 410 620
––– 92 140
––– 140 210
––– 23 –––
––– 190 –––
––– 130 –––
––– 130 –––
––– 5.0 –––
––– 13 –––
––– 13000 –––
––– 2100 –––
––– 500 –––
––– 9780 –––
––– 1360 –––
––– 2320 –––
V
V/°C
mΩ
V
S
µA
nA
nC
ns
nH
pF
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 125A „
V_DS = 10V, I_D = 250µA
V_DS = 25V, I_D = 125A
V_DS = 75V, V_GS = 0V
V_DS = 60V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = 125A
V_DS = 60V
V_GS = 10V„
V_DD = 38V
I_D = 125A
R_G = 1.2Ω
V_GS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 60V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 209†
A
showing the
integral reverse
G
––– ––– 840
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 125A, V_GS = 0V „
––– 140 210 ns T_J = 25°C, I_F = 125A
––– 880 1320 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting T_J = 25°C, L = 0.25mH
R_G = 25Ω, I_AS = 125A. (See Figure 12).
ƒ I_SD ≤ 125A, di/dt ≤ 260A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
‡ Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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