IRFBA1405P Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A⑥)

IRFBA1405P
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 101A
16
V_DS = 44V
V_DS = 27V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
60
120
180
240
300
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
T_J = 175° C
100
T_J = 25 ° C
10
V _GS = 0 V
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100
100us
1ms
10
10ms
T_C = 25° C
T_J = 175° C
Single Pulse
1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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