IRFBA1405P Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A⑥)

PD -94111
AUTOMOTIVE MOSFET
Typical Applications
q Electric Power Steering (EPS)
q Anti-lock Braking System (ABS)
q Wiper Control
q Climate Control
q Power Door
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
G
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET^® Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175^oC junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 ^TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 ^TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
IRFBA1405P
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 5.0mΩ
I_D = 174A†
S
Super-220™
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
www.irf.com
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
174†
123†
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
3/1/01