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IRFBA1405P Datasheet, PDF (2/9 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A⑥) | |||
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IRFBA1405P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance Â
Min. Typ. Max. Units
Conditions
55 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.057 âââ V/°C Reference to 25°C, ID = 1mA
âââ 4.3 5.0 m⦠VGS = 10V, ID = 101A Â
2.0 âââ 4.0
69 âââ âââ
V VDS = 10V, ID = 250µA
S VDS = 25V, ID = 110A
âââ âââ 20
âââ âââ 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
âââ 170 260
âââ 44 66
âââ 62 93
âââ 13 âââ
ID = 101A
nC VDS = 44V
VGS = 10VÂ
VDD = 38V
âââ 190 âââ ns ID = 110A
âââ 130 âââ
RG = 1.1â¦
âââ 110 âââ
VGS = 10V Â
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contact
S
âââ 5480 âââ
VGS = 0V
âââ 1210 âââ pF VDS = 25V
âââ 280 âââ
Æ = 1.0MHz, See Fig. 5
âââ 5210 âââ
âââ 900 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 44V, Æ = 1.0MHz
âââ 1500 âââ
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 174Â
A
showing the
integral reverse
G
âââ âââ 680
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 101A, VGS = 0V Â
âââ 88 130 ns TJ = 25°C, IF = 101A
âââ 250 380 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
RθJC
RθCS
RθJA
2
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.50
âââ
Max.
Units
0.45
°C/W
âââ
58
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