IRFBA1404PPBF Datasheet, PDF (4/10 Pages) International Rectifier – AUTOMOTIVE MOSFET HEXFET® Power MOSFET

IRFBA1404PPbF
12000
10000
8000
6000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
4000
2000
0
1
C_oss
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 95A
16
12
V_DS = 32V
V_DS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80 120 160 200 240
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
T_J = 175° C
100
T_J = 25° C
10
V_GS = 0 V
1
0.4
0.8
1.2
1.6
2.0
2.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100
100us
1ms
10
10ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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