IRFBA1404PPBF Datasheet, PDF (1/10 Pages) International Rectifier – AUTOMOTIVE MOSFET HEXFET® Power MOSFET

AUTOMOTIVE MOSFET
PD - 95903
IRFBA1404PPbF
Typical Applications
l Anti-lock Braking Systems (ABS)
l Electric Power Steering (EPS)
l Electric Braking
l Radiator Fan Control
l Lead-Free
Benefits
l Advanced Process Technology
G
l Ultra Low On-Resistance
l Increase Current Handling Capability
l 175°C Operating Temperature
l Fast Switching
l Dynamic dv/dt Rating
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this Stripe Planar design
of HEXFET^® Power MOSFETs utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features of
this MOSFET are a 175^oC junction operating temperature, fast switching
speed and improved ruggedness in single and repetitive avalanche. The
Super-220 ^TM is a package that has been designed to have the same
mechanical outline and pinout as the industry standard TO-220 but can
house a considerably larger silicon die. The result is significantly increased
current handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance silicon and
the Super-220 ^TM package makes it ideal to reduce the component count in
multiparalled TO-220 applications, reduce system power dissipation,
upgrade existing designs or have TO-247 performance in a TO-220 outline.
This package has been designed to meet automotive, Q101, qualification
standard.
These benefits make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 3.7mΩ
I_D = 206A†
S
Super-220™
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
www.irf.com
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
206†
145†
650
300
2.0
± 20
480
See Fig.12a, 12b, 14, 15
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
09/15/04