IRFBA1404PPBF Datasheet, PDF (2/10 Pages) International Rectifier – AUTOMOTIVE MOSFET HEXFET® Power MOSFET

IRFBA1404PPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
Conditions
40 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.036 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 3.7 mΩ V_GS = 10V, I_D = 95A „
2.0 ––– 4.0 V V_DS = 10V, I_D = 250µA
106 ––– ––– S V_DS = 25V, I_D = 60A
––– ––– 20 _µA V_DS = 40V, V_GS = 0V
––– ––– 250
V_DS = 32V, V_GS = 0V, T_J = 150°C
––– ––– 200 _nA V_GS = 20V
––– ––– -200
V_GS = -20V
––– 160 200
I_D = 95A
––– 35 ––– nC V_DS = 32V
––– 42 60
V_GS = 10V
––– 17 –––
V_DD = 20V
––– 140 ––– _ns I_D = 95A
––– 72 –––
R_G = 2.5Ω
––– 26 –––
R_D = 0.21Ω „
Between lead,
D
––– 2.0 –––
nH ^{6mm (0.25in.)}
from package
G
––– 5.0 –––
and center of die contact
S
––– 7360 –––
––– 1680 –––
V_GS = 0V
V_DS = 25V
––– 240 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 6630 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
––– 1490 –––
––– 1540 –––
V_GS = 0V, V_DS = 32V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 206†
A
showing the
integral reverse
G
––– ––– 650
p-n junction diode.
S
––– ––– 1.3
––– 71 110
––– 180 270
V T_J = 25°C, I_S = 95A, V_GS = 0V „
ns T_J = 25°C, I_F = 95A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Thermal Resistance
R_θJC
R_θCS
R_θJA
2
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.5
–––
Max.
Units
0.50
–––
°C/W
58
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