IRFB52N15D Datasheet, PDF (4/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

IRFB/IRFS/IRFSL52N15D
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
 12
ID = 36A
10
 ^{VDS = 120V}
V_DS = 75V
V_DS = 30V
7
5
2
0
0
20
40
60
80
100
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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