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| IRFB52N15D Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) | |||
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IRFB/IRFS/IRFSL52N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ âââ
0.16 âââ
âââ 0.032
âââ 5.0
âââ 25
âââ 250
âââ 100
âââ -100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A Â
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
19 âââ âââ S VDS = 50V, ID = 36A
Qg
Total Gate Charge
âââ 79 120
ID = 36A
Qgs
Gate-to-Source Charge
âââ 25 37 nC VDS = 120V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 34 51
VGS = 10V, Â
td(on)
Turn-On Delay Time
âââ 16 âââ
VDD = 75V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 47 âââ ns ID = 36A
âââ 28 âââ
RG = 2.5â¦
tf
Fall Time
âââ 25 âââ
VGS = 10V Â
Ciss
Input Capacitance
âââ 2770 âââ
VGS = 0V
Coss
Output Capacitance
âââ 590 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 110 âââ pF Æ = 1.0MHz
Coss
Output Capacitance
âââ 3940 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Output Capacitance
âââ 260 âââ
VGS = 0V, VDS = 120V, Æ = 1.0MHz
Coss eff. Effective Output Capacitance
âââ 550 âââ
VGS = 0V, VDS = 0V to 120V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
470
36
32
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 60
A showing the
integral reverse
G
âââ âââ 240
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 36A, VGS = 0V Â
âââ 140 210 nS TJ = 25°C, IF = 36A
âââ 780 1170 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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